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1

Emergence of green building guidelines in developed countries and their impact on India

Egbu, Charles, Potbhare, Varun, Syal, Matt, Arif, Mohammed, Khalfan, Malik M.A., Egbu, Charles

Journal:

Journal of Engineering Design and Technology

Year:

2009

Language:

english

File:

PDF, 114 KB

english, 2009

2

Simulation of reflectivity spectrum for non-absorbing multilayer optical thin films

V. A. Kheraj, C. J. Panchal, M. S. Desai, V. Potbhare

Journal:

Year:

2009

Language:

english

File:

PDF, 791 KB

english, 2009

3

[IEEE 2020 Fourth International Conference on Inventive Systems and Control (ICISC) - Coimbatore, India (2020.1.8-2020.1.10)] 2020 Fourth International Conference on Inventive Systems and Control (ICISC) - An Efficient and Secure Students Online Voting Application

Pawar, Bhushan M., Patode, Sachin H., Potbhare, Yamini R., Mohota, Nilesh A.

Year:

2020

File:

PDF, 598 KB

2020

4

Ground-state occupancies and effective interactions in s-d shell nuclei

V. Potbhare, S.P. Pandya

Journal:

Nuclear Physics A

Year:

1976

Language:

english

File:

PDF, 844 KB

english, 1976

5

Correlation coefficients of effective interactions in the s-d shell

Journal:

Nuclear Physics A

Year:

1977

Language:

english

File:

PDF, 369 KB

english, 1977

6

Ground-state proton-neutron occupancies in the f-p shell

V.K.B. Kota, V. Potbhare

Journal:

Nuclear Physics A

Year:

1979

Language:

english

File:

PDF, 1.15 MB

english, 1979

7

A Physical Model of High Temperature 4H-SiC MOSFETs

Potbhare, S., Goldsman, N., Lelis, A., McGarrity, J.M., McLean, F.B., Habersat, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 1.38 MB

english, 2008

8

[IEEE 2014 IEEE Transportation Electrification Conference and Expo (ITEC) - Dearborn, MI (2014.6.15-2014.6.18)] 2014 IEEE Transportation Electrification Conference and Expo (ITEC) - Design of a phase-shifted ZVS full-bridge front-end DC/DC converter for fuel cell inverter applications

Farneth, Ian P., Satinu, Michael B., Wang, Haoyu, Khaligh, Alireza, Potbhare, Siddharth, Giroux, Stefan, Akturk, Akin, Goldsman, Neil

Year:

2014

Language:

english

File:

PDF, 426 KB

english, 2014

9

[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Distributed numerical modeling of low temperature MOSFET operation

Akturk, A., Holloway, M., Gundlach, D., Potbhare, S., Li, B., Goldsman, N., Peckerar, M., Cheung, K.P.

Year:

2009

Language:

english

File:

PDF, 89 KB

english, 2009

10

Silicon Carbide Ultraviolet Photodetector Modeling, Design and Experiments

Akturk, Akin, Dandin, Marc, Vert, Alexey V., Soloviev, Stanislav I., Sandvik, P., Potbhare, Siddharth, Goldsman, Neil, Abshire, Pamela

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 1.16 MB

english, 2012

11

Microspheres/Custard‐Apples Copper (II) Chelate Polymer: Characterization, Docking, Antioxidant and Antibacterial Assay

Bagade, Reena, Chaudhary, Ratiram Gomaji, Potbhare, Ajay, Mondal, Aniruddha, Desimone, Martin, Dadure, Kanhaiya, Mishra, Raghvendra, Juneja, Harjeet

Journal:

ChemistrySelect

Year:

2019

Language:

english

File:

PDF, 1.44 MB

english, 2019

12

Metal/Metal Oxide Nanoparticles: Toxicity, Applications, and Future Prospects

Chaudhary, Ratiram Gomaji, Bhusari, Ganesh S., Tiple, Ashish D., Rai, Alok R., Somkuvar, Subhash R., Potbhare, Ajay K., Lambat, Trimurti L., Ingle, Prashant P., Abdala, Ahmed A.

Journal:

Current Pharmaceutical Design

Year:

2019

Language:

english

File:

PDF, 4.88 MB

english, 2019

13

Single-nucleon transfer sum-rules in the 2s1d shell

V. Potbhare, N. Tressler

Journal:

Nuclear Physics A

Year:

1991

Language:

english

File:

PDF, 1.47 MB

english, 1991

14

Low energy level spacing distribution in the atomic table ensemble

V.K.B. Kota, V. Potbhare

Journal:

Physics Letters A

Year:

1980

Language:

english

File:

PDF, 413 KB

english, 1980

15

Compact modeling of 0.35 μm SOI CMOS technology node for 4 K DC operation using Verilog-A

A. Akturk, M. Peckerar, K. Eng, J. Hamlet, S. Potbhare, E. Longoria, R. Young, T. Gurrieri, M.S. Carroll, N. Goldsman

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 1.68 MB

english, 2010

16

Strength functions for interacting bosons in a mean-field with random two-body interactions

N.D. Chavda, V. Potbhare, V.K.B. Kota

Journal:

Physics Letters A

Year:

2004

Language:

english

File:

PDF, 229 KB

english, 2004

17

Average-fluctuations separation in energy levels in dense interacting Boson systems

Kinnary Patel, M.S. Desai, V. Potbhare, V.K.B. Kota

Journal:

Physics Letters A

Year:

2000

Language:

english

File:

PDF, 220 KB

english, 2000

18

Statistical properties of dense interacting boson systems with one- plus two-body random matrix ensembles

N.D. Chavda, V. Potbhare, V.K.B. Kota

Journal:

Physics Letters A

Year:

2003

Language:

english

File:

PDF, 227 KB

english, 2003

19

Bivariate distributions in statistical spectroscopy studies

V. K. B. Kota, V. Potbhare

Journal:

Zeitschrift für Physik A Hadrons and Nuclei

Year:

1985

Language:

english

File:

PDF, 564 KB

english, 1985

20

Energy dependence of the strengths of pairing and quadrupole-quadrupole components of the nuclear effective interactions

V. K. B. Kota, V. Potbhare

Journal:

Zeitschrift für Physik A Hadrons and Nuclei

Year:

1982

Language:

english

File:

PDF, 369 KB

english, 1982

21

A comparative study of effective interactions via correlations with quadrupole and pairing operators

V.K.B. Kota, S.P. Pandya, V. Potbhare

Journal:

Nuclear Physics A

Year:

1980

Language:

english

File:

PDF, 1.29 MB

english, 1980

22

Inverse energy weighted sum-rules

V K B Kota, V Potbhare, P Shenoy, N Tressler

Journal:

Year:

1989

Language:

english

File:

PDF, 293 KB

english, 1989

23

Eigenvalue density for ensemble of 2-body random hamiltonians with non-zero mean for matrix elements

V Potbhare, V K B Kota

Journal:

Year:

1978

Language:

english

File:

PDF, 420 KB

english, 1978

24

Shape of spectrum with ensemble of 2-body random hamiltonians

Journal:

Year:

1978

Language:

english

File:

PDF, 151 KB

english, 1978

25

Spectral averaging for single-nucleon-transfer sum rules

J.P. Draayer, J.B. French, M. Prasad, V. Potbhare, S.S.M. Wong

Journal:

Physics Letters B

Year:

1975

Language:

english

File:

PDF, 283 KB

english, 1975

26

E2 polynomial strengths: A comparison with shell-model results

J.P. Draayer, J.B. French, V. Potbhare, S.S.M. Wong

Journal:

Physics Letters B

Year:

1975

Language:

english

File:

PDF, 368 KB

english, 1975

27

Polynomial expansions for excitation strengths

J.P. Draayer, J.B. French, V. Potbhare, S.S.M. Wong

Journal:

Physics Letters B

Year:

1975

Language:

english

File:

PDF, 263 KB

english, 1975

28

Energy- and Time-Dependent Dynamics of Trap Occupation in 4H-SiC MOSFETs

Potbhare, S., Goldsman, N., Akturk, A., Gurfinkel, M., Lelis, A., Suehle, J.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 839 KB

english, 2008

29

Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

Akturk, A., Holloway, M., Potbhare, S., Gundlach, D., Li, B., Goldsman, N., Peckerar, M., Cheung, K.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.17 MB

english, 2010

30

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - (Invited) Modeling and Simulation of Silicon Carbide Power Systems

Goldsman, Neil, Potbhare, Siddharth, Akturk, Akin, Salemi, Shahrzad, Lelis, Aivars

Year:

2011

Language:

english

File:

PDF, 704 KB

english, 2011

31

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - The effect of different passivations on near interface trap density of 4H-SiC/SiO2 structures

Salemi, S., Akturk, A., Potbhare, S., Lelis, A., Goldsman, N.

Year:

2011

Language:

english

File:

PDF, 106 KB

english, 2011

32

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces

Akturk, A., Salemi, S., Goldsman, N., Potbhare, S., Lelis, A.

Year:

2011

Language:

english

File:

PDF, 502 KB

english, 2011

33

Thermalization in one- plus two-body ensembles for dense interacting boson systems

Chavda, N.D., Kota, V.K.B., Potbhare, V.

Journal:

Physics Letters A

Year:

2012

Language:

english

File:

PDF, 352 KB

english, 2012

34

High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation

Akturk, Akin, Goldsman, Neil, Potbhare, Siddharth, Lelis, Aivars

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 514 KB

english, 2009

35

Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Potbhare, Siddharth, Goldsman, Neil, Pennington, Gary, Lelis, Aivars, McGarrity, James M.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 661 KB

english, 2006

36

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Modeling the Effect of Conduction Band Density of States on Interface Trap Occupation and Its Influence on 4H-SiC MOSFET Performance

Potbhare, Siddharth, Akturk, Akin, Goldsman, Neil, Lelis, Aivars, Dhar, Sarit, Ryu, Sei-Hyung, Agarwal, Anant

Year:

2009

Language:

english

File:

PDF, 319 KB

english, 2009

37

Onset of chaos in finite interacting Boson systems with F-spin

H. N. Deota, N. D. Chavda, V. Potbhare

Journal:

The European Physical Journal Special Topics

Year:

2013

Language:

english

File:

PDF, 495 KB

english, 2013

38

Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation

Potbhare, Siddharth, Pennington, Gary, Goldsman, Neil, Lelis, Aivars J., Habersat, Daniel B., McLean, F. Barry, McGarrity, J.M.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 242 KB

english, 2006

39

A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges

S. Potbhare, N. Goldsman, G. Pennington, A. Lelis, J. M. Mcgarrity

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 360 KB

english, 2006

40

Shape transition of state density for bosonic systems

DEOTA, HARSHAL N, CHAVDA, N D, POTBHARE, V

Journal:

Year:

2013

Language:

english

File:

PDF, 261 KB

english, 2013

41

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations

Ettisserry, D. P., Salemi, S., Goldsman, N., Potbhare, S., Akturk, A., Lelis, A.

Year:

2013

Language:

english

File:

PDF, 731 KB

english, 2013

42

[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - On the amplitude of random telegraph noise

Cheung, K. P., Campbell, J. P., Potbhare, S., Oates, A.

Year:

2012

Language:

english

File:

PDF, 301 KB

english, 2012

43

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Optoelectronic characterization of 4H-SiC avalanche photodiodes operated in DC and in geiger mode

Dandin, M., Akturk, A., Vert, A., Soloviev, S., Sandvik, P., Potbhare, S., Goldsman, N., Abshire, P., Cheung, K. P.

Year:

2011

Language:

english

File:

PDF, 442 KB

english, 2011

44

Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

Akturk, A., McGarrity, J. M., Potbhare, S., Goldsman, N.

Journal:

IEEE Transactions on Nuclear Science

Year:

2012

Language:

english

File:

PDF, 1001 KB

english, 2012

45

[IEEE 2006 IEEE International Integrated Reliability Workshop Final Report - South Lake Tahoe, CA, USA (2006.10.16-2006.09.19)] 2006 IEEE International Integrated Reliability Workshop Final Report - Modeling and Characterization of Bias Stress-Induced Instability of SiC MOSFETs

Lelis, A.J., Potbhare, S., Habersat, D., Pennington, G., Goldsman, N.

Year:

2006

Language:

english

File:

PDF, 192 KB

english, 2006

46

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - The amplitude of random telegraph noise: Scaling implications

Cheung, Kin P., Campbell, J.P., Potbhare, S., Oates, A.

Year:

2012

Language:

english

File:

PDF, 486 KB

english, 2012

47

[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces

Pennington, G., Potbhare, S., McGarrity, J., Goldsman, N., Lelis, A., Ashman, C.

Year:

2006

Language:

english

File:

PDF, 4.21 MB

english, 2006

48

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Impact of Surface Steps on the Roughness Mobility in 4H-SiC

Pennington, G., Potbhare, S., Goldsman, N., McGarrity, J.M., Lelis, A.

Year:

2005

Language:

english

File:

PDF, 308 KB

english, 2005

49

[IEEE 2007 IEEE International Integrated Reliability Workshop Final Report - South Lake Tahoe, CA, USA (2007.10.15-2007.10.18)] 2007 IEEE International Integrated Reliability Workshop Final Report - Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels

Gurfinkel, M., Jinwoo Kim,, Potbhare, S., Xiong, H.D., Cheung, K.P., Suehle, J., Bernstein, J.B., Shapira, Yoram, Lelis, A.J., Habersat, D., Goldsman, N.

Year:

2007

Language:

english

File:

PDF, 439 KB

english, 2007

50

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - Numerical Modeling and Characterization of n-Channel 4H-SiC Double-Diffused Vertical Power MOSFET

Jianzhou Wu,, Potbhare, S., Goldsman, N., Lelis, A.

Year:

2005

Language:

english

File:

PDF, 927 KB

english, 2005

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